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This paper describes the growth kinetics of an interfacial MgO layer as well as those of an MgB2 layer during ex situ annealing of the evaporated amorphous boron (a-B) film under Mg vapor overpressure. A thin MgO layer is formed at the interface between a-B and Al2O3 substrate before the formation of crystalline MgB2 layer and the interfacial layer is epitaxiallyrelated with Al2O3 substrate (MgO (111)[11¯0] // Al2O3 (0001)). The interfacial MgO layer continues to grow during the annealing, and its apparent growth rate is about 0.1 nm/min. The analysis of MgB2 layer growth kinetics using cross-sectional transmission electron microscopyreveals that there exist two distinct growth fronts at both sides of an MgB2 layer. The growth kinetics of the lower MgB2 layer obeys the parabolic rate law during the entire annealing time. The growth of the upper MgB2 layer is controlled by the surface reaction between out-diffused boron and Mg vapor up to 10 min,resulting in a rough surface morphology of MgB2 layer. By considering the mass balance of Mg and boron during ex situ annealing, we obtauned the diffusivities of Mg and boron in MgB2 layer which were in the same order range of approximately 10-12 cm2/s.
Transparent mesoporous silica films were prepared by sol-gel spin coating on silicon wafers at room temperature. An erbium complex, erbium tris 8-hydroxyquinoline (ErQ), was homogeneously impregnated into the pores of the mesoporous silica films, and its concentration was easily controlled by using a solution immersing technique. The ErQ-impregnated mesoporous silica films show a room-temperature photoluminescence at 1.5 µm.
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